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| SUP57N20-33 Vishay Siliconix N-Channel 200-V (D-S) 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) () 0.033 at VGS = 10 V ID (A) 57 FEATURES * TrenchFET(R) Power MOSFET * 175 C Junction Temperature Available RoHS* APPLICATIONS * Isolated DC/DC converters - Primary-Side Switch COMPLIANT TO-220AB D DRAIN connected to TAB G GDS Top View S Ordering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range a Symbol VDS VGS TC = 25 C TC = 125 C ID IDM IAS L = 0.1 mH TC = 25 C TA = 25 Cc EAS PD TJ, Tstg Limit 200 20 57 33 140 35 61 300 b Unit V A mJ W C 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72100 S-71662-Rev. B, 06-Aug-07 www.vishay.com 1 c Symbol RthJA RthJC Limit 40 0.5 Unit C/W SUP57N20-33 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr IRM(REC) Qrr Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 125 C VDS = 160 V, VGS = 0 V, TJ = 175 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125 C VGS = 10 V, ID = 30 A, TJ = 175 C VDS = 15 V, ID = 30 A Min 200 2 Typ Max Unit 4 100 1 50 250 V nA A A 120 0.027 0.033 0.069 0.093 25 5100 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Rise Timec Turn-Off Delay Timec Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge c VGS = 0 V, VDS = 25 V, f = 1 MHz 480 210 90 130 pF VDS = 100 V, VGS = 10 V, ID = 85 A 23 34 24 35 330 70 300 nC Turn-On Delay Timec VDD = 100 V, RL = 1.5 ID 65 A, VGEN = 10 V, RG = 2.5 220 45 200 ns Source-Drain Diode Ratings and Characteristics (TC = 25 C)b 65 140 IF = 65 A, VGS = 0 V IF = 50 A, di/dt = 100 A/s 1.0 130 8 0.52 1.5 200 12 1.2 A V ns A C Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72100 S-71662-Rev. B, 06-Aug-07 SUP57N20-33 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 140 VGS = 10 thru 7 V 120 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 5V 20 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 20 25 C - 55 C 6V 120 100 80 60 40 TC = 125 C 140 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 180 TC = - 55 C 150 g fs - Transconductance (S) 25 C 120 125 C 90 r DS(on) - On-Resistance () 0.045 0.060 Transfer Characteristics VGS = 10 V 0.030 60 0.015 30 0 0 20 40 60 80 100 120 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance 7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 25 50 75 100 125 150 Crss 20 On-Resistance vs. Drain Current V GS - Gate-to-Source Voltage (V) 16 VDS = 100 V ID = 65 A 12 8 4 Coss 0 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 72100 S-71662-Rev. B, 06-Aug-07 Gate Charge www.vishay.com 3 SUP57N20-33 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3.0 VGS = 10 V ID = 30 A I S - Source Current (A) 100 2.5 r DS(on) - On-Resistance (Normalized) 2.0 TJ = 150 C 10 TJ = 25 C 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 240 Source-Drain Diode Forward Voltage 1000 230 ID = 1.0 mA 100 V (BR)DSS (V) 220 I Dav (A) IAV (A) at TA = 25 C 10 210 200 1 190 IAV (A) at TA = 150 C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 180 - 50 - 25 0 25 50 75 100 125 150 175 t in (Sec) TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72100 S-71662-Rev. B, 06-Aug-07 SUP57N20-33 Vishay Siliconix THERMAL RATINGS 60 1000 Limited by rDS(on) 100 I D - Drain Current (A) 40 I D - Drain Current (A) 10 s 50 100 s 10 1 ms 10 ms, 100 ms DC TC = 25 C Single Pulse 30 20 1 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (C) VDS - Drain-to-Source Voltage (V) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72100. Document Number: 72100 S-71662-Rev. B, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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